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| NTZD3155C Small Signal MOSFET Complementary 20 V, 540 mA / -430 mA, with ESD protection, SOT-563 package. Features http://onsemi.com ID Max (Note 1) * * * * * * * * * * * Leading Trench Technology for Low RDS(on) Performance High Efficiency System Performance Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices V(BR)DSS N-Channel 20 V RDS(on) Typ 0.4 W @ 4.5 V 0.5 W @ 2.5 V 0.7 W @ 1.8 V 0.5 W @ -4.5 V 540 mA Applications P-Channel -20 V 0.6 W @ -2.5 V 1.0 W @ -1.8 V -430 mA DC-DC Conversion Circuits Load/Power Switching with Level Shift Single or Dual Cell Li-Ion Battery Operated Systems High Speed Circuits Cell Phones, MP3s, Digital Cameras, and PDAs PINOUT: SOT-563 S1 1 6 D1 MAXIMUM RATINGS (TJ = 25C unless otherwise specified) Parameter Drain-to-Source Voltage Gate-to-Source Voltage N-Channel Continuous Drain Current (Note 1) P-Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State tv5s Steady State tv5s Steady State tv5s Pulsed Drain Current N-Channel P-Channel tp = 10 ms IDM TJ, TSTG IS TL TA = 25C TA = 85C TA = 25C TA = 25C TA = 85C TA = 25C TA = 25C PD 280 1500 -750 -55 to 150 350 260 mA C mA C ID Symbol VDSS VGS Value 20 6 540 390 570 -430 -310 -455 250 mW mA Unit V V G1 2 5 G2 D2 3 Top View 4 S2 6 1 SOT-563-6 CASE 463A TW M G MARKING DIAGRAM TW M G G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) ORDERING INFORMATION Device NTZD3155CT1G Package SOT-563 (Pb-Free) SOT-563 (Pb-Free) SOT-563 (Pb-Free) Shipping 4000 / Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq [1 oz] including traces). NTZD3155CT2G 4000 / Tape & Reel NTZD3155CT5G 8000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 May, 2007 - Rev. 2 Publication Order Number: NTZD3155C/D NTZD3155C Thermal Resistance Ratings Parameter Junction-to-Ambient - Steady State (Note 2) Junction-to-Ambient - t = 5 s (Note 2) Symbol RqJA Max 500 447 Unit C/W 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V(BR)DSS N P Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS/TJ IDSS N P N P Gate-to-Source Leakage Current IGSS P N ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(TH) N P Gate Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) N P N P N P Forward Transconductance gFS N P CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS CISS COSS CRSS P f = 1 MHz, VGS = 0 V VDS = -16 V N f = 1 MHz, VGS = 0 V VDS = 16 V 80 13 10 105 15 10 150 25 20 175 30 20 pF VGS = 4.5 V, ID = 540 mA VGS = -4.5V , ID = -430 mA VGS = 2.5 V, ID = 500 mA VGS = -2.5V , ID = -300 mA VGS = 1.8 V, ID = 350 mA VGS = -1.8V , ID = -150 mA VDS = 10 V, ID = 540 mA VDS = -10 V, ID = -430 mA VGS = VDS ID = 250 mA ID = -250 mA 0.45 -0.45 -1.9 0.4 0.5 0.5 0.6 0.7 1.0 1.0 1.0 S 0.55 0.9 0.7 1.2 0.9 2.0 W 1.0 -1.0 -mV/ C V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS= -16 V VGS = 0 V, VDS = 16 V VGS = 0 V, VDS= - 16V VDS = 0 V, VGS = 4.5 V TJ = 125C TJ = 25C VGS = 0 V ID = 250 mA ID = -250 mA 20 -20 18 1.0 -1.0 2.0 -5.0 $2.0 $5.0 mA mA mV/C mA V Symbol N/P Test Condition Min Typ Max Unit 3. Pulse Test: pulse width v300 ms, duty cycle v2% http://onsemi.com 2 NTZD3155C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD P VGS = -4.5 V, VDS = 10 V; ID = -380 mA N VGS = 4.5 V, VDS = -10 V; ID = 540 mA 1.5 0.1 0.2 0.35 1.7 0.1 0.3 0.4 2.5 nC 2.5 SWITCHING CHARACTERISTICS (VGS = V) (Note 4) Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Of f Delay Time Fall Time Drain-Source Diode Characteristics Forward Diode Voltage VSD N P Reverse Recovery Time tRR N P VGS = 0 V, TJ = 25C VGS = 0 V, dIS/dt = 100 A/ms IS = 350 mA IS = -350 mA IS = 350 mA IS = -350 mA 0.7 -0.8 6.5 13 ns 1.2 -1.2 V td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf P VGS = -4.5 V, VDD = 10 V, ID = -215 mA, RG = 10 W N VGS = 4.5 V, VDD = -10 V, ID = 540 mA, RG = 10 W 6.0 4.0 16 8.0 10 12 35 19 ns 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 NTZD3155C N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1.2 5.5 V 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 VGS = 1.4 V 0.4 0.2 0 0 VGS = 1.2 V VGS = 1.0 V 1 2 3 4 5 6 7 8 9 10 1.8 V VGS = 1.6 V VGS = 2.0 V to 2.2 V TJ = 25C ID, DRAIN CURRENT (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.5 1.0 TJ = 25C TJ = 100C VDS w 10 V TJ = -55C 1.5 2.0 2.5 3.0 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-T O-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE CURRENT RESISTANCE (W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1 3 4 5 VGS, GATE-T O-SOURCE VOLTAGE (V) 2 6 Figure 2. Transfer Characteristics 0.9 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID = 0.54 A TJ = 25C TJ = 25C 0.8 VGS = 1.8 V 0.7 0.6 0.5 0.4 0.3 0.2 VGS = 2.5 V VGS = 4.5 V 0.4 0.6 0.8 ID, DRAIN CURRENT (A) 1 1.2 Figure 3. On-Resistance versus Gate-to-Source Voltage 2 Figure 4. On-Resistance versus Drain Current and Gate Voltage 1000 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 IDSS, LEAKAGE (nA) ID = 0.54 A VGS = 4.5 V VGS = 0 V TJ = 150C 100 TJ = 100C 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 NTZD3155C N-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS, GATE-T O-SOURCE VOLTAGE (V) 200 5 4 20 16 TJ = 25C QT VDS VGS 150 3 12 100 VGS = 0 V CISS 2 8 QGS 1 QGD ID = 0.54 A TJ = 25C 4 50 VDS = 0 V COSS 0 0 VDS DRAIN-T O-SOURCE VOLTAGE (V) 5 10 15 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (A) VDS = 10 V ID = 0.2 A VGS = 4.5 V t, TIME (ns) td(OFF) 10 tr tf td(ON) Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 0.6 0.5 0.4 0.3 0.2 0.1 0 0.2 VGS = 0 V TJ = 25C 1 1 10 RG, GATE RESISTANCE (W) 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 1 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) NTZD3155C P-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1 VGS = -2 V VGS = -1.8 V TJ = 25C -I D, DRAIN CURRENT (A) -1.6 V 1 VDS -10 V 0.8 -I D, DRAIN CURRENT (A) 0.8 0.6 -1.4 V 0.4 -1.2 V 0.2 -1 V 0 0 1 2 3 4 5 6 7 8 9 10 -V DS, DRAIN-TO-SOURCE VOLTAGE (V) 0.6 0.4 TJ = -55C 25C 0 0 100C 0.5 1 1.5 2 -V GS, GATE-T O-SOURCE VOLTAGE (V) 2.5 0.2 Figure 1. On-Region Characteristics RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) RDS(on), DRAIN-T O-SOURCE RESISTANCE (W) 0.8 0.75 0.7 0.65 0.6 0.55 0.5 0.45 0.4 1 3 5 4 -V GS, GATE-T O-SOURCE VOLTAGE (V) 2 6 ID = -0.43 A TJ = 25C 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.1 0.2 Figure 2. Transfer Characteristics TJ = 25C VGS = -1.8 V VGS = -2.5 V 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -I D, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.6 RDS(on), DRAIN-T O-SOURCE RESISTANCE (NORMALIZED) ID = -0.43 A VGS = -4.5 V -I DSS, LEAKAGE (nA) 1.4 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 1.2 1 TJ = 100C 100 0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 TJ, JUNCTION TEMPERATURE (C) -V DS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 6 NTZD3155C P-CHANNEL TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -V DS, DRAIN-T O-SOURCE VOLTAGE (VOLTS) -V GS, GATE-T O-SOURCE VOLTAGE (V) 250 VGS = 0 V C, CAPACITANCE (pF) 200 CISS TJ = 25C 5 QT -V DS -V GS 10 9 8 7 6 5 4 150 3 100 COSS 50 0 0 5 10 15 20 CRSS 2 QGS 1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 QG, TOTAL GATE CHARGE (nC) QGD ID = -0.215 A TJ = 25C 4 3 2 1 0 DRAIN-T O-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 0.6 -I S, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 0.4 100 td(OFF) t, TIME (ns) tf 10 tr td(ON) 0.2 VDD = -10 V ID = -0.215 A VGS = -4.5 V 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 -V SD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 7 NTZD3155C PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F D -X- A L 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 6 5 1 2 3 E -Y- HE b e 5 6 PL M C XY 0.08 (0.003) SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NTZD3155C/D |
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